Scaling the AI Power Wall.

The only 1200V Vertical GaN platform—from design to scale, accelerated by AI.

The Grid Is Breaking Under AI's Weight.

AI data centers are running out of power. As GPU clusters migrate to 800V HVDC architectures, traditional Silicon and Silicon Carbide are hitting hard physical limits—in switching loss, thermal density, and voltage headroom.

HexaGaN.ai delivers the 1200V efficiency ceiling the next generation of AI factories demands. This isn't incremental improvement. It's a new material paradigm.

One Platform. Three Unfair Advantages.

HexaGaN.ai integrates proprietary hardware, AI-accelerated design, and scalable manufacturing into a vertically integrated power platform.

1200V Vertical GaN

Proprietary vertical GaN technology delivering 5x the power density and >99% efficiency, purpose-built for high-voltage AI infrastructure.

PowerAgents™ AI Engine

Physics-informed AI platform that cuts customer integration cycles from 12 months to 6 months, accelerating design, validation, and deployment.

Foundry Scale

Secured production roadmap with a leading global 8-inch GaN foundry—enabling rapid transition from prototype to infrastructure-scale deployment.

Technical Edge

Why Vertical GaN Wins at 1200V

Lateral GaN maxes out below 700V. Silicon Carbide carries high defect density and cost. Vertical GaN uniquely combines high breakdown voltage, low on-resistance, and fast switching—the trifecta that unlocks 800V HVDC power conversion at scale.

5x Power Density

vs. Silicon baseline

99%+ Efficiency

Conversion at full load

1200V Rated

Native breakdown voltage

75% Faster NPI

AI-accelerated design cycles

PowerAgents™: AI That Speaks GaN Physics

Most power IC design tools are material-agnostic. PowerAgents™ is different—trained exclusively on GaN-specific device physics, simulation data, and fabrication feedback loops accumulated over ten years of R&D.

The result: design cycles compressed from quarters to weeks, with higher first-pass yield and tighter performance envelopes than traditional TCAD-driven workflows.

Pedigree Built on a Decade of Hard Science.

Born at Rice University, HexaGaN is built on over a decade of high-voltage GaN research, with exclusive licenses to core U.S. patents covering vertical epitaxy, device architecture, and process integration.

Our team combines deep materials science expertise with power electronics systems experience—backed by strategic partnerships with Tier-1 infrastructure leaders and global foundry relationships.

Market Context

The Power Infrastructure Market Is Repricing.

Hyperscalers are committing hundreds of billions to AI infrastructure build-out. Every rack-scale deployment needs a power conversion solution that didn't exist two years ago. HexaGaN.ai is positioned at the exact inflection point where material science meets infrastructure urgency.

800V HVDC Adoption

Hyperscale standard shifting away from 48V bus architectures

Silicon Carbide Ceiling

Cost, defect density, and switching limits constraining SiC at scale

Vertical GaN Window

First-mover advantage in the only viable 1200V switching solution

HexaGaN.ai™ — The only 1200V Vertical GaN platform, from design to scale, accelerated by AI.

© 2024 Hexa Creation, Inc. HexaGaN.ai™ and PowerAgents™ are trademarks of Hexa Creation, Inc. All rights reserved.